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d a t a sh eet product speci?cation supersedes data of 1998 oct 14 file under integrated circuits, ic19 2000 sep 29 integrated circuits oq2538hp; oq2538u sdh/sonet stm16/oc48 main amplifiers
2000 sep 29 2 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u features differential 100 w outputs for direct connection to current-mode logic (cml) inputs wide bandwidth (3 ghz) 48.5 db limiting gain noise figure typically 11 db automatic offset compensation input level-detection circuits for automatic gain control (agc) and loss of signal (los) detection low power dissipation (typically 270 mw) single - 4.5 v supply voltage low cost lqfp48 plastic package. applications main amplifier in synchronous digital hierarchy (sdh) and synchronous optical network (sonet) systems for short, medium and long haul optical transmission level detector for laser diode control loops wideband rf gain block with internal level detectors. general description the oq2538hp is a limiting amplifier ic intended for use as the main amplifier in 2.5 gbits/s non-return to zero (nrz) transmission systems (sdh/sonet). comprised of four amplifier stages with a total gain of 48.5 db, it provides for a wide input signal dynamic range at a constant cml-compatible output level. two level-detection circuits are provided for monitoring agc and los input signal levels. an internal automatic offset compensation circuit eliminates offset in the amplifier chain. ordering information type number package name description version oq2538hp lqfp48 plastic low pro?le quad ?at package; 48 leads; body 7 7 1.4 mm sot313-2 oq2538u - bare die; dimensions 2070 2070 380 m m -
2000 sep 29 3 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u block diagram fig.1 block diagram. handbook, full pagewidth mge745 amp a amp b amp c amp d b in inq ref v ee coff coffq gnd out outq 8 6 45 21 capa 22 44 32 losdc 18 los agcdc agc 19 a 43 3 30 reference voltage for all cells band gap oq2538hp
2000 sep 29 4 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u pinning notes 1. pin type abbreviations: o = output, i = input, s = power supply and a = analog function. 2. all gnd and v ee pads must be bonded; do not leave one single gnd or v ee pad unconnected! 3. pads denoted n.c. should not be connected. connections to these pads degrade device performance. symbol pin (oq2538hp) pa d (oq2538u) type (1) description v ee 1, 12, 13, 24, 25, 36, 37, 48 2, 3, 11, 12, 28, 29 (2) s negative power supply n.c. 2, 11, 14, 15, 23, 26, 27, 35, 38, 40, 46, 47 20, 22 (3) - not connected agc 3 30 o recti?er a output gnd 4, 5, 7, 9, 10, 16, 17, 20, 28, 29, 31, 33, 34, 39, 41, 42 1, 4, 5, 8, 13, 14, 16, 18, 19, 21, 23, 24, 31, 32, 34, 36 (2) s ground inq 6 33 i main ampli?er inverting input in 8 35 i main ampli?er input losdc 18 6 o recti?er b reference output los 19 7 o recti?er b output ref 21 9 o band gap reference capa 22 10 a pin for connecting band gap reference decoupling capacitor outq 30 15 o main ampli?er inverted output out 32 17 o main ampli?er output agcdc 43 25 o recti?er a reference output coffq 44 26 a pin for connecting automatic offset control capacitor (return) coff 45 27 a pin for connecting automatic offset control capacitor
2000 sep 29 5 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u fig.2 pin configuration. handbook, full pagewidth 1 2 3 4 5 6 7 8 9 10 11 36 35 34 33 32 31 30 29 28 27 26 13 14 15 16 17 18 19 20 21 22 23 48 47 46 45 44 43 42 41 40 39 38 12 24 37 25 oq2538hp mge744 v ee n.c. gnd gnd gnd outq gnd gnd n.c. n.c. v ee v ee n.c. agc gnd gnd inq in gnd n.c. v ee out n.c. n.c. coff coffq agcdc gnd n.c. gnd n.c. v ee v ee gnd gnd gnd n.c. n.c. gnd gnd losdc los gnd capa n.c. v ee v ee ref
2000 sep 29 6 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u functional description the oq2538hp is comprised of four dc-coupled amplifier stages along with additional circuitry for offset compensation and level detection. the first amplifier stage contains a modified cherry/hooper amplifying cell with high gain (approximately 20 db) and a wide bandwidth. special attention is paid to minimizing the equivalent input noise at this stage, thus reducing the overall noise level. additional feedback is applied at the second and third stages, improving isolation and reducing the gain to 14 db per stage. the last stage is an output buffer, a unity gain amplifier, with an output impedance of 100 w . the total gain of the oq2538hp amounts to 48.5 db, thus providing a constant cml-compatible output signal over a wide input signal range. two rectifier circuits are used to measure the input signal level. two separate rf preamplifiers are used to generate the voltage gain needed to obtain a suitable rectifier output voltage. for rectifier a the gain is approximately 18 db, for rectifier b it is about 14 db. the output of rectifier a can be used for agc at the preamplifier stage in front of the oq2538hp. the output of rectifier b can be used for los detection. there is a linear relationship between the rectifier output voltage and the input signal level provided the amplifiers are not saturated. because the four gain stages are dc-coupled and provide a high overall gain, the effect of the input offset can be considerable. the oq2538hp features an internal offset compensation circuit for eliminating the input offset. the bandwidth of the offset control loop is determined by an external capacitor. coff and coffq offset compensation automatic offset compensation eliminates the input offset of the oq2538hp. this offset cancellation influences the low frequency gain of the amplifier stages. with a capacitance of 100 nf between coff and coffq the loop bandwidth will be less than 1.5 khz, small enough to have no influence on amplifier gain over the frequencies of interest. if the capacitor was omitted, the loop bandwidth would be greater than 30 mhz, which would influence the input signal gain. the loop bandwidth can be calculated from the following formula: (1) where c ext is the capacitance connected between coff and coffq. f loop 1 2 p 1250 w c ext ------------------------------------------------ = ref and capa band gap output and decoupling capacitance to reduce band gap noise levels, a 1 nf decoupling capacitor on capa is recommended. since the band gap is referenced to the negative power supply, the decoupling capacitor should be connected between capa and v ee . the band gap voltage is present on pin ref for test purposes only. it is not intended to serve as an external reference. rf input and output connections striplines, or microstrips, with an odd mode characteristic impedance of z o(odd) =50 w must be used for the differential rf connections on the pcb. this applies to both the input signal pair in and inq and to the output signal pair out and outq. the two lines in each pair should have the same length. rf input matching circuit the input circuit for pins in and inq contains internal 100 w resistors decoupled to ground via an internal common mode 6 pf capacitor. the topology is depicted in fig.3. fig.3 rf input topology. handbook, halfpage mgm114 in inq gnd 100 w 6 pf 100 w
2000 sep 29 7 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u an external 200 w resistor between in and inq is recommended in order to match the inputs to a differential transmission line, coupled microstrip or stripline with an odd mode impedance z o(odd) =50 w , as shown in fig.4. for single-ended excitation, separate matching networks on in and inq, as depicted in fig.5, achieve optimum matching. care should be taken to avoid dc loading, since the oq2538hp controls its own dc input voltage. the resistors on the unused input inq may be combined for convenience. in both cases, the essence of good matching is the equity of the circuitry on both input pins. the impedance seen on pins in and inq should be as equal as possible. for more information see application note an96051 describing the om5801 stm16 demo board. rf output matching circuit matching of the main amplifier outputs, out and outq, is not mandatory. in most applications, the receiving end of the transmission line will be properly matched, so very little reflection will occur. matching the transmitting end to absorb these reflections is only recommended for very sensitive applications. in such cases, 100 w pull-up resistors should be connected from out and outq to ground, as close as possible to the ic pins. these matching resistors will not be needed in most applications, however. the output circuit of the oq2538hp is depicted in fig.6. for more information see application note an96051 describing the om5801 stm16 demo board. fig.4 differential input matching. handbook, halfpage differential line z o(odd) = 50 w mgm115 200 w in inq 22 nf 22 nf fig.5 single-ended input matching. handbook, halfpage mgm116 100 w 100 w 50 w in inq 22 nf 22 nf 22 nf 22 nf z o = 50 w transmission line fig.6 rf output topology. handbook, halfpage mgm117 out outq gnd 100 w 100 w
2000 sep 29 8 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u rf gain and group delay measurements the measurement set-up shown in fig.7 was used to measure the single-ended small signal gain as specified in chapter characteristics. since the network analyzer can only perform single-ended measurements, the single-ended matching scheme described above is used to match the inputs of the oq2538hp to 50 w . for greater accuracy, the outputs are also matched. the gain measured with this set-up is denoted by s 21 . graphs of typical s 21 and group delay characteristics are shown in figs 8 and 9. the oq2538hp test pcb used for these measurements can be supplied on request. although the differential voltage gain of the oq2538hp cannot be measured directly, it can be calculated from s 21 . the differential voltage gain is 6 db greater than the measured s 21 value, typically 46 db (4 0 + 6 db). if the 100 w matching resistors on the output are omitted, the differential voltage gain is increased by a further 2.4 db, typically to 48.4 db. this is due to the fact that the output load is increased from 25 to 33 w , so the output voltage is increased by a factor of 1.32 (2.4 db). when performing s 21 measurements make sure the input power level is around - 50 dbm, as indicated in fig.7 (port 1 of the network analyzer). for correct measurement results the oq2538 should not be limiting the input signal, but operate in its linear region. this can be achieved by using a very small input signal level of - 50 dbm. fig.7 s 21 and group delay measurement set-up. handbook, full pagewidth mgm111 100 w 50 w sma termination in inq out outq 100 pf 100 pf 50 w semi rigid 100 w 100 w 100 w 50 w sma termination 50 w semi rigid 50 w semi rigid 50 w semi rigid oq2538hp test pcb p = 50 dbm s-parameter test set 6 ghz network analyzer port 1 port 2 v ee = - 4.5 v z o = 50 w z o = 50 w
2000 sep 29 9 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u fig.8 s 21 characteristic, measured on the oq2538hp test pcb. handbook, full pagewidth mgm160 start: 30 khz s 21 log mag 40 db stop: 6 ghz (2) (4) (3) (1) vertical scale 6 db/division. linear frequency sweep; start: 30 khz; stop: 6 ghz. (1) 41.603 db; 1 ghz. (2) 38.633 db; 3.45 ghz. (3) 41.291 db; 2 ghz. (4) 41.386 db; 2.5 ghz.
2000 sep 29 10 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u fig.9 group delay characteristic, measured on the oq2538hp test pcb. handbook, full pagewidth mgm161 start: 30 khz s 21 delay 0 ps stop: 6 ghz (2) (4) (3) (1) vertical scale 200 ps/division. linear frequency sweep; start: 30 khz; stop: 6 ghz. (1) 832.91 ps; 1 ghz. (2) 1007.4 ps; 3.45 ghz. (3) 834 ps; 2 ghz. (4) 860.93 ps; 2.5 ghz.
2000 sep 29 11 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u noise ?gure measurements the noise figure is the ratio of signal-to-noise ratio at the input (s i /n i ) to signal-to-noise ratio at the output (s o /n o )of the amplifier. this definition is true for both single-ended and differential amplifiers, provided the correct values for s i /n i and s o /n o are substituted in the formula. the noise figure is measured using the differential set-up shown in fig.10. the total noise on the output (n o in dbm) is measured using the spectrum analyzer at the frequency of interest. from this value, the actual (differential) noise figure for that frequency (spot noise figure) can be calculated using the following formula: the factor 2 in the denominator is present to compensate for the fact that s 21 is the single-ended power gain, whereas the differential power gain is applicable in this situation. n i can be replaced with the available noise power at the input, which is kt under matched conditions (k is boltzmanns constant). the formula expressed in dbm makes calculation easier: , assuming log(kt) is - 173.8 dbm (t = 298 k) and n o measured in 1 hz bandwidth and expressed in dbm. for the oq2538hp, in the differential configuration (including the 100 w matching resistors), this yields a typical noise figure of 11 db. while the performance of this measurement set-up cannot match that of a dedicated noise analysis system, the results are comparable for an amplifier with a noise figure of 11 db. f s i n i s o n o ----------------- n o 2s 21 n i -------------------------- - n o 2s 21 kt ---------------------------- == = fn o = s 21 3 + () 173.8 + C db [] fig.10 noise figure measurement set-up. handbook, full pagewidth mgm112 100 w 50 w sma termination in inq out outq 100 pf 100 pf 50 w semi rigid 100 w 100 w 100 w 50 w sma termination 50 w sma termination 50 w semi rigid 50 w semi rigid 50 w semi rigid oq2538hp test pcb in spectrum analyzer z o = 50 w v ee = - 4.5 v
2000 sep 29 12 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u fig.11 agc transfer characteristics. (1) t amb = - 20 c. (2) t amb = +25 c. (3) t amb = +85 c. mge746 0 10 0 203040 100 200 60 80 v agc - v agcdc (mv) 50 v in (mv p-p) (1) (2) (3) fig.12 los detection characteristics. (1) t amb = - 20 c. (2) t amb = +25 c. (3) t amb = +85 c. 0 100 200 v in (mv p-p) 1 0 357 24681011 9 v los - v losdc (mv) mge747 (1) (2) (3) agc and agcdc level detection when using rectifier a as an input signal level detector, the agc and agcdc pins must be decoupled to ground with 100 nf capacitors. the agcdc output is intended as a reference voltage against which the actual agc output voltage can be compared. this voltage difference, v agc - v agcdc , can be used as a control input in an agc loop. a graph depicting output voltage difference as a function of the input signal level (typical) is shown in fig.11. note that an input signal with the specified peak-to-peak value is applied to both in and inq inputs, but with complementary phase. los and losdc level detection the output of rectifier b can be used for los detection. the losdc output provides a reference voltage against which the voltage at the los output can be compared. the voltage difference v los - v losdc can be used as input to a los detection circuit. both outputs need to be decoupled using 100 nf capacitors. a graph depicting v los - v losdc as a function of the input signal level (typical) is shown in fig.12. note that an input signal with the specified peak-to-peak value is applied to both in and inq inputs, but with complementary phase. grounding and power supply decoupling the ground connection on the pcb needs to be a large copper area fill connected to a common ground plane with as low inductance as possible, preferably positioned directly underneath the lqfp48 package. the large area fill will improve heat transfer to the pcb and thus aid ic cooling. all v ee pins (two at each corner) need to be connected to a common supply plane with as low inductance as possible. this plane should be decoupled to ground. to avoid high frequency resonance, multiple bypass capacitors should not be mounted at the same location. to minimize low frequency switching noise in the vicinity of the oq2538hp, the power supply line should be filtered once using an lc-circuit with a low cut-off frequency (see fig.14).
2000 sep 29 13 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u using alternative supply voltages although the oq2538hp is intended to be used with a single - 4.5 v supply voltage, a slightly modified - 5v supply can also be used. by connecting a schottky diode between the v ee power supply line and the ic, an additional 0.5 v voltage drop is obtained, bringing the supply voltage on the pins of the oq2538hp within the specified range. a bas85 schottky diode is recommended. a - 5 v application schematic is shown in fig.15. extrapolating from this case, a +5 v application is also possible. however, care should be taken with the rf transmission lines. the on-chip signals refer to the gnd pins, which become the positive supply pins in a +5 v application. the external transmission lines will most likely be referenced to system ground (v ee pins). the rf signals will change from one reference plane to another at the interface to the rf input and output pins. the positive supply application is very vulnerable to interference at this point. for a successful +5 v application, special care should be taken when designing board layout to reduce the influence of interference and keep the positive supply as clean as possible. esd protection exceptions have been made to the standard esd protection scheme in order to achieve high frequency performance. the inputs in and inq and the outputs out and outq have no protection against esd. all other pins have a standard esd protection structure, capable of withstanding 2 kv human body model (hbm) zappings.
2000 sep 29 14 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. d v i =v in - v inq (ac only). the dc level is internally controlled. handling precautions should be taken to avoid damage through electrostatic discharge. this is particularly important during assembly and handling of the bare die. additional safety can be obtained by bonding the v ee and gnd pads first, the remaining pads may then be bonded to their external connections in any order (see also section esd protection). thermal characteristics note 1. r th(j-a) will be in the application from 15 to 65 k/w, dependent on the pcb layout. symbol parameter conditions min. max. unit v ee negative supply voltage - 6.0 +0.5 v d v i input voltage difference note 1 - 600 +600 mv i in , i inq input current - 2.0 +2.0 ma i n dc current pins 30 and 32 - 6 +10 ma pins 3, 18, 19 and 43 - 3+3ma pin 21 - 2+2ma pins 44 and 45 - 1+1ma pin 22 - 0.1 +0.1 ma p tot total power dissipation - 380 mw t j junction temperature - 150 c t stg storage temperature - 65 +150 c symbol description conditions value unit r th(j-s) thermal resistance from junction to solder point 15 k/w r th(j-a) thermal resistance from junction to ambient note 1 65 k/w
2000 sep 29 15 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u characteristics at nominal supply voltages; t amb = - 40 to +85 c; 50 w measuring environment. symbol parameter conditions min. typ. max. unit v ee negative supply voltage - 4.725 - 4.5 - 4.275 v i ee negative supply current - 60 80 ma p tot total power dissipation note 1 - 270 380 mw t amb operating ambient temperature note 2 - 40 - +85 c t j operating junction temperature - 40 - +120 c main ampli?er inputs: in and inq; note 3 v i(sens) input sensitivity note 4 - 0.5 2.5 mv v i(p-p) signal voltage swing (peak-to-peak value) note 4 2.5 - 600 mv v i dc input voltage note 5 - 2.4 - 2.1 - 1.7 v v io input offset voltage note 6 - 0.2 - mv z i single-ended input impedance note 7 - 100 -w s 21 single-ended small signal gain note 8 34 40 - db g v(dif) differential voltage gain note 9 - 48.5 - db n o output noise power note 10 -- 120 - dbm f noise ?gure note 10 - 11 - db b - 3db 3 db bandwidth 2.4 3.0 - ghz recti?er outputs: agc and agcdc; note 11 v o(ref) dc reference voltage open output - 3.3 - 3.0 - 2.5 v v i(p-p) input voltages on pins in and inq for linear recti?er output (peak-to-peak value) 12.5 - 60 mv d v maximum input signal level related voltage difference note 12 - 400 - mv v oo output offset voltage note 13 - 5 - +5 mv recti?er outputs: los and losdc; note 11 v o(ref) dc reference voltage open output - 3.4 - 3.1 - 2.6 v v i(p-p) input voltages on pins in and inq for linear reciti?er output (peak-to-peak value) 2.5 - 9mv d v maximum input signal level related voltage difference note 12 - 450 - mv v oo output offset voltage note 13 - 15 - +15 mv automatic offset compensation lowpass ?lter: coff and coffq v o dc output voltage open output - 2.4 - 2.1 - 1.7 v r offset compensation ?lter resistance - 1250 -w band gap reference: ref v o band gap voltage referenced to v ee ; open output; note 14 1.1 1.3 1.5 v
2000 sep 29 16 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u notes 1. no special cooling is required in the application if the total thermal resistance r th(j-a) is less than 90 k/w. 2. the temperature of the pcb in the vicinity of the ic is taken to be the ambient temperature. 3. the input signal must be ac-coupled to the inputs through a coupling capacitance >22 nf. 4. v i(p-p) is the input signal on in and inq for full output clipping. it is assumed that both inputs carry a complementary signal of the specified peak-to-peak value. the lower specified limit is usually called the input sensitivity. this value is defined as a 20% increase in rise and fall times when compared to rise and fall times with a complementary input signal of 10 mv (p-p) applied to in and inq. 5. the dc voltage is fixed internally; only ac-coupling of the input signal is allowed. 6. v io = ? v in - v inq ? 7. see section rf input matching circuit for detailed information. 8. all signal ports are ac-matched to 50 w and are measured at 1 ghz (see fig.7). flatness deviations are within 3db over the entire bandwidth. 9. see section rf gain and group delay measurements. 10. f is the noise figure for a differential application and is measured at 1 ghz. see section noise figure measurements. 11. an external 100 nf capacitor is connected at each output to remove any spurious high frequency signals. any circuitry driven from these pins must have an input impedance >50 k w . 12. voltage difference between agc (los) and agcdc (losdc), measured with a differential square wave input signal of 600 mv (p-p) on in and inq. 13. the offset is measured with inputs in and inq shorted together. 14. the band gap voltage may not be used as an external reference. 15. both outputs are connected to ground through a 50 w load resistance and carry complementary signals. 16. the output levels are dependent on load impedance. the specified values assume an external load impedance of 50 w . if the external 100 w matching resistors are connected at pins out and outq, the output levels will fall to 75% of the specified values (see also section rf gain and group delay measurements). band gap reference decoupling: capa v o decoupling voltage referenced to v ee ; open output - 2.9 - v main ampli?er outputs: out and outq; note 15 v oh high-level output voltage - 20 - 50 mv v ol low-level output voltage note 16 - 280 - 200 - 140 mv t r differential output rise time input signal >2.5 mv (p-p) - 100 150 ps t f differential output fall time input signal >2.5 mv (p-p) - 100 150 ps z o single-ended output impedance see fig.6 83 100 117 w symbol parameter conditions min. typ. max. unit
2000 sep 29 17 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u application information fig.13 system application diagram. handbook, full pagewidth mge748 i photo v bias photodiode r fb trans- impedance amplifier limiting amplifier data and clock recovery filter cgy2100 oq2538hp oq2541hp to data and clock recovery unit data recovered clock fig.14 typical application schematic. handbook, full pagewidth mge749 10 m h 1 nf 100 nf 4.7 m f 100 nf 100 nf 33 nf 100 nf 100 nf oq2538hp in inq in 8 6 3 43 19 18 22 21 44 45 30 32 c in c inq inq agc los losdc v ee gnd agcdc out outq coffq coff ref capa gain regulation loss of signal detection - 4.5 v 200 w > 22 nf > 22 nf v ee
2000 sep 29 18 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u fig.15 - 5 v application schematic. handbook, full pagewidth mgm113 10 m h 1 nf 100 nf 4.7 m f 100 nf 100 nf 33 nf 100 nf 100 nf oq2538hp in inq in 8 6 3 43 19 18 22 21 44 45 30 32 c in c inq inq agc los losdc v ee gnd agcdc out outq coffq coff ref capa gain regulation loss of signal detection - 5.0 v 200 w > 22 nf > 22 nf v ee bas85
2000 sep 29 19 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u bonding pad locations fig.16 bonding pad locations of oq2538u. (1) typical value. handbook, full pagewidth 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 gnd gnd gnd gnd gnd inq in v ee v ee gnd gnd outq gnd out gnd gnd n.c. n.c. gnd gnd gnd agcdc coffq coff v ee v ee gnd gnd gnd ref capa losdc los mgr525 2.07 mm (1) 2.07 (1) mm oq2538u x y 0 0 agc v ee v ee
2000 sep 29 20 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u table 1 bonding pad locations. all x/y coordinates represent the position of the centre of the pad with respect to the centre of the die (see fig.16). symbol pad coordinates xy gnd 1 - 900 - 700 v ee 2 - 900 - 900 v ee 3 - 700 - 900 gnd 4 - 500 - 900 gnd 5 - 300 - 900 losdc 6 - 100 - 900 los 7 +100 - 900 gnd 8 +300 - 900 ref 9 +500 - 900 capa 10 +700 - 900 v ee 11 +900 - 900 v ee 12 +900 - 700 gnd 13 +900 - 500 gnd 14 +900 - 300 outq 15 +900 - 100 gnd 16 +900 +100 out 17 +900 +300 gnd 18 +900 +500 gnd 19 +900 +700 n.c. 20 +900 +900 gnd 21 +700 +900 n.c. 22 +500 +900 gnd 23 +300 +900 gnd 24 +100 +900 agcdc 25 - 100 +900 coffq 26 - 300 +900 coff 27 - 500 +900 v ee 28 - 700 +900 v ee 29 - 900 +900 agc 30 - 900 +700 gnd 31 - 900 +500 gnd 32 - 900 +300 inq 33 - 900 +100 gnd 34 - 900 - 100 in 35 - 900 - 300 gnd 36 - 900 - 500 symbol pad coordinates xy table 2 physical characteristics of bare die parameter value glass passivation 0.8 m m silicon nitride on top of 0.9 m m psg (phosphosilicate glass) bonding pad dimension minimum dimension of exposed metallization is 90 90 m m (pad size = 100 100 m m) metallization 1.8 m m alcu (1% cu) thickness 380 m m nominal size 2.070 2.070 mm (4.285 mm 2 ) backing silicon; electrically connected to v ee potential through substrate contacts attache temperature <440 c; recommended die attache is glue attache time <15 s
2000 sep 29 21 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u package outline unit a max. a 1 a 2 a 3 b p ce (1) eh e ll p z y w v q references outline version european projection issue date iec jedec eiaj mm 1.60 0.20 0.05 1.45 1.35 0.25 0.27 0.17 0.18 0.12 7.1 6.9 0.5 9.15 8.85 0.95 0.55 7 0 o o 0.12 0.1 0.2 1.0 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 0.75 0.45 sot313-2 ms-026 136e05 99-12-27 00-01-19 d (1) (1) (1) 7.1 6.9 h d 9.15 8.85 e z 0.95 0.55 d b p e e b 12 d h b p e h v m b d z d a z e e v m a 1 48 37 36 25 24 13 q a 1 a l p detail x l (a ) 3 a 2 x y c w m w m 0 2.5 5 mm scale pin 1 index lqfp48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm sot313-2
2000 sep 29 22 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering can still be used for certain surface mount ics, but it is not suitable for fine pitch smds. in these situations reflow soldering is recommended. re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 220 c for thick/large packages, and below 235 c for small/thin packages. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
2000 sep 29 23 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 2. these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 4. wave soldering is only suitable for lqfp, tqfp and qfp packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. package soldering method wave reflow (1) bga, lfbga, sqfp, tfbga not suitable suitable hbcc, hlqfp, hsqfp, hsop, htqfp, htssop, sms not suitable (2) suitable plcc (3) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (3)(4) suitable ssop, tssop, vso not recommended (5) suitable
2000 sep 29 24 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u data sheet status note 1. please consult the most recently issued data sheet before initiating or completing a design. data sheet status product status definitions (1) objective speci?cation development this data sheet contains the design target or goal speci?cations for product development. speci?cation may change in any manner without notice. preliminary speci?cation quali?cation this data sheet contains preliminary data, and supplementary data will be published at a later date. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. product speci?cation production this data sheet contains ?nal speci?cations. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2000 sep 29 25 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u notes
2000 sep 29 26 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u notes
2000 sep 29 27 philips semiconductors product speci?cation sdh/sonet stm16/oc48 main ampli?ers oq2538hp; oq2538u notes
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go to philips semiconductors' home page catalog & datasheets catalog by function catalog by system cross reference models packages application notes selection guides other technical documentation end of life information relevant links - about catalog tree - about search - about this site - subscribe to enews - catalog & datasheets - search - products similar to oq2538hp; oq2538u ? oq2538hp; oq2538u - download pdf ? oq2538hp; oq2538u product information page information as of 2001-06-08 ? oq2538hp; oq2538u; sdh/sonet stm16/oc48 main amplifiers ? description ? features ? applications ? datasheet ? products, packages, availability and ordering ? find similar products ? order this product online - subscribe to enews to be kept informed on oq2538hp; oq2538u, subscribe to enews. description go to the top of this page the oq2538hp is a limiting amplifier ic intended for use as the main amplifier in 2.5 gbits/s non-return to zero (nrz) transmission systems (sdh/sonet). comprised of four amplifier stages with a total gain of 48.5 db, it provides for a wide input signal dynamic range at a constant cml-compatible output level. two level-detection circuits are provided for monitoring agc and los input signal levels. an internal automatic offset compensation circuit eliminates offset in the amplifier chain. features go to the top of this page differential 100 ohm outputs for direct connection to current-mode logic (cml) inputs l wide bandwidth (3 ghz) l 48.5 db limiting gain l noise figure typically 11 db l automatic offset compensation l input level-detection circuits for automatic gain control (agc) and loss of signal (los) detection l low power dissipation (typically 270 mw) l single -4.5 v supply voltage l low cost lqfp48 plastic package. l applications go to the top of this page main amplifier in synchronous digital hierarchy (sdh) and synchronous optical network (sonet) systems for short, medium and long haul optical transmission l level detector for laser diode control loops l wideband rf gain block with internal level detectors. l datasheet go to the top of this page type nr. title publication release date datasheet status page count file size (kb) datasheet oq2538hp; oq2538u? sdh/sonet stm16/oc48 main amplifiers? 29-sep-00? product specification? 28 ? 142? download pdf ? download? philips semiconductors: product information on oq2538hp; oq2538u, sdh/sonet stm16/oc48 main amplifiers file:///e|/export/projects/bitting2/imaging/bitting/mail_pdf/cpl_images/s1.html (1 of 2) [7/17/2001 5:14:19 pm]
products, packages, availability and ordering go to the top of this page partnumber north american partnumber order code (12nc) marking/packing download pdf ? ic packing info package device status buy online oq2538hp/s1? oq2538hpb-s? 9351?631?00551? standard marking * tray dry pack, bakeable, single? sot313-2 (lqfp48)? full?production? order this product online - oq2538u/s1? ? 9352?623?58026? no marking * die in waffle carriers? -? full?production? - find similar products: go to the top of this page products similar to oq2538hp; oq2538u ? oq2538hp; oq2538u links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. the similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category. copyright ? 2001 royal philips electronics all rights reserved. terms and conditions . philips semiconductors: product information on oq2538hp; oq2538u, sdh/sonet stm16/oc48 main amplifiers file:///e|/export/projects/bitting2/imaging/bitting/mail_pdf/cpl_images/s1.html (2 of 2) [7/17/2001 5:14:19 pm]

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